SiC MOS V-305

BM840F12B34U2-D

Description:

BYD SiC Power Module BM840F12B34U2 provides low switching,which introduce the advanced SiC MOSFET chip,it is able to take on a perfect performance in various applications with switching frequencies in the range of 1-30KHz.

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Features：

The 3rd Generation Semiconductor Material-Silicon Carbide
Blocking Voltage 1200V
Low RDS（on）
Low Switching Losses
Low Qg and Cres Low Inductive Design≤15nH
Ag Sintering
Tvj op=175ºC
Direct Cooled Cu PinFin Base Plate
High Performance Si3N4 Ceramic
Integrated NTC Temperature Sensor

Application:

Automotive Application
AC Motor Control
Motion/Servo Control
Maximum

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