SiC MOS V-305

BM840F12B34U1

Description:

BYD SiC Power Module BM840F12B34U1 provides low switching,which introduce the advanced SiC MOSFET chip,it is able to take on a perfect performance in various applications with switching frequencies in the range of 1-30KHz

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Features：

The 3rd Generation Semiconductor Material-Silicon Carbide
Blocking Voltage 1200V
Low RDS（on）
Low Switching Losses
Low Qg and Cres Low Inductive Design≤15nH
Ag Sintering
Tvj op=175ºC
Direct Cooled Cu PinFin Base Plate
High Performance Si3N4 Ceramic
Integrated NTC Temperature Sensor

Application:

Automotive Application
AC Motor Control
Motion/Servo Control
Maximum applied voltage platform: 750V

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Image	Type	VCE[V] Tj≥25℃	IC[A]	RDS(on)[mΩ] Tj≥25℃	Download
	BM1040F12B34U2	1200	1040	2
	BM950F12B34U2	1200	950	1.9
	BM840F12B34U1	1200	840	2.7
	BM700F12B34U4	1200	700	2.7
	BM820F08B34U2	750	820	2.1
	BM840F12B34U2-D	1200	840	2.7
	BM700F12B34U1	1200	700	3.2
	BM840F12B34U5	1200	840	3.8
	BM840F12B34U2	1200	840	2.7
	BM1040F12B34U1	1200	1040	2
	BM700F12B34U5	1200	700	4.4
	BM1040F12B34U2-D	1200	1040	2