SiC MOS V-305

BM700F12B34U4

Description:

BYD SiC Power Module BM700F12B34U4 provides low switching,which introduce the advanced SiC MOSFET chip,it is able to take on a perfect performance in various applications with switching frequencies in the range of 1-30KHz

Send message to us Download PDF

Features：

The 3rd Generation Semiconductor Material-Silicon Carbide
Blocking Voltage 1200V
Low RDS（on）
Low Switching Losses
Low Qg and Cres Low Inductive Design≤15nH
Ag Sintering
Tvj op=175ºC
Direct Cooled Cu PinFin Base Plate
High Performance Si3N4 Ceramic
Integrated NTC Temperature Sensor

Application:

Automotive Application
AC Motor Control
Motion/Servo Control
Maximum applied

Related products:

Any questions

Welcome to leave a message here and leave your
contact information
We will reply to you as soon as possible

Products

Application

About Us

Contact Us

E-mail : globalsale@szbjxk.com

Tel : +86 18681432083

Add :

Room 1007, Toxin Times Building, Pingshan Avenue, Pingshan District, Shenzhen City, Guangdong Province

Image	Type	VCE[V] Tj≥25℃	IC[A]	RDS(on)[mΩ] Tj≥25℃	Download
	BM1040F12B34U2	1200	1040	2
	BM950F12B34U2	1200	950	1.9
	BM840F12B34U1	1200	840	2.7
	BM700F12B34U4	1200	700	2.7
	BM820F08B34U2	750	820	2.1
	BM840F12B34U2-D	1200	840	2.7
	BM700F12B34U1	1200	700	3.2
	BM840F12B34U5	1200	840	3.8
	BM840F12B34U2	1200	840	2.7
	BM1040F12B34U1	1200	1040	2
	BM700F12B34U5	1200	700	4.4
	BM1040F12B34U2-D	1200	1040	2